Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

Abstract

We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($\mu$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison with as-grown samples. Combination of power-dependent and polarization-resolved measurements reveal background-free exciton, biexciton and dark exciton emission with resolution-limited linewidth below 35 $\mu$eV and biexciton binding energy of ~1 meV. The results are confirmed by statistical measurements of about 20 QDs.

15 pages, 4 figures

References in corpus (4)

• Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
• A quantum light emitting diode for the standard telecom window around 1550 nm
• Universal growth scheme for entanglement-ready quantum dots
• Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 $\mu$m entangled photon emitter

Cited by in corpus (12)

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• From Quantum Dots to Quantum Dashes: Excitonic Spectra of Highly Elongated InAs/InP Nanostructures
• Efficient, indistinguishable telecom C-band photons using a tapered nanobeam
• Peculiar spectra of dark and bright excitons in alloyed nanowire quantum dots
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• Multi-channel, tunable quantum photonic devices on a fiber-integrated platform
• Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band