Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
arXiv:1903.09681 · doi:10.1016/j.jlumin.2019.04.058
Abstract
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single dot photoluminescence excitation spectroscopy is limited mainly to dots emitting below 1 m, while nanostructures optically active in the telecommunication windows of 1.3 and 1.55 m are of particular interest, as they correspond to the desirable wavelengths in nanophotonic applications. This report presents an approach to photoluminescence excitation spectroscopy covering this application-relevant spectral range on single dot level. Experimental details are discussed, including issues related to the tunable excitation source and its spectral filtering, and illustrated with examples of photoluminescence excitation spectroscopy results from single quantum dots emitting in both the 1.3 and 1.55 m spectral ranges.
arXiv comment19 pages, 5 figures, revised manuscript text and new figure 1, to be published in Journal of Luminescence
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Cited by in corpus (3)
- Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
- Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
- Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm