Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si

Abstract

Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim 10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.

References in corpus (8)

• Quantum computational advantage using photons
• Integrated Photonic Quantum Technologies
• Boson sampling with 20 input photons in 60-mode interferometers at $10^{14}$ state spaces
• A solid-state entangled photon pair source with high brightness and indistinguishability
• Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling
• Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots
• InP-based single-photon sources operating at telecom C-band with increased extraction efficiency
• On-demand generation of entangled photon pairs in the telecom C-band for fiber-based quantum networks

Cited by in corpus (12)

• High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
• On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
• Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
• Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures
• Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
• Efficient, indistinguishable telecom C-band photons using a tapered nanobeam
• Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
• Optimization of heterogeneously integrated InP-Si on-chip photonic components
• Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band
• Spin properties in droplet epitaxy-grown telecom quantum dots
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots
• Hybrid acousto-optical spin control in quantum dots