69 citations · 245 across the 12 of their papers we have counts for
12 papers
Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity
Valdemar Bille-Lauridsen, Rasmus Jarbøl, Meng Xiong +4
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This…
Efficient passivation of III-As(P) photonic interfaces
Yury Berdnikov, Paweł Holewa, Aurimas Sakanas +7
Surface effects can significantly impact the performance of nanophotonic and quantum photonic devices, especially as the device dimensions are reduced. In this work, we propose and…
Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Marek Burakowski, Paweł Holewa, Aurimas Sakanas +6
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respec…
On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
Daniel A. Vajner, Paweł Holewa, Emilia Zięba-Ostój +10
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum c…
High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Paweł Holewa, Daniel A. Vajner, Emilia Zięba-Ostój +14
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-ph…
Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
Yury Berdnikov, Pawel Holewa, Shima Kadkhodazadeh +6
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms…
Experimental Demonstration of Nanolaser with sub-A Threshold Current
E. Dimopoulos, M. Xiong, A. Sakanas +6
We demonstrate a photonic crystal nanolaser exhibiting an ultra-low threshold of 730 nA at telecom wavelengths. The laser can be directly modulated at 3 GHz at an energy cost of 1…
Cavity-dumping using a microscopic Fano laser
G. Dong, S. L. Liang, A. Sakanas +4
A microlaser with low energy consumption and high speed is crucial for on-chip photonic networks. Presently, the modulation of microlasers is based on modulating the gain of the la…
Optimization of heterogeneously integrated InP-Si on-chip photonic components
P. Mrowiński, P. Holewa, A. Sakanas +3
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum d…
Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Evangelos Dimopoulos, Aurimas Sakanas, Andrey Marchevsky +5
Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lase…
Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
Paweł Holewa, Aurimas Sakanas, Uğur Meriç Gür +8
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assemb…
Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding
Aurimas Sakanas, Elizaveta Semenova, Luisa Ottaviano +2
In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. Afte…