Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Abstract

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-doping absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pumping schemes.

References in corpus (5)

• Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
• Demonstration of a self-pulsing photonic crystal Fano laser
• Spontaneous mirror-symmetry breaking in a photonic molecule
• Experimental demonstration of a high quality factor photonic crystal microcavity
• Threshold Characteristics of Slow-Light Photonic Crystal Lasers

Cited by in corpus (6)

• Experimental Demonstration of Nanolaser with sub-$\mu$A Threshold Current
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• Simple yet Accurate Stochastic Approach to the Quantum Phase Noise of Nanolasers
• Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity
• Modeling Quantum Noise in Nanolasers using Markov Chains
• Ultrafast neural sampling with spiking nanolasers