Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Abstract

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $\mu$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.

References in corpus (13)

• Single-shot read-out of an individual electron spin in a quantum dot
• Quantum Repeaters with Photon Pair Sources and Multi-Mode Memories
• Size-Dependence of the Wavefunction of Self-Assembled Quantum Dots
• Site-Controlled Telecom Single-Photon Emitters in Atomically-thin MoTe2
• Excitation mechanisms of individual CdTe/ZnTe quantum dots studied by photon correlation spectroscopy
• Purcell enhancement of single-photon emitters in silicon
• Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
• Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
• Two-photon interferences of weak coherent lights
• Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for Single-Photon Sources emitting in the Telecommunication O-Band
• Design and fabrication of ridge waveguide-based nanobeam cavities for on-chip single-photon sources
• Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
• Optimization of heterogeneously integrated InP-Si on-chip photonic components