69 citations · 380 across the 19 of their papers we have counts for
20 papers
Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector
Paweł Mrowiński, Jan Śmigiel, Mikołaj Badura +5
We demonstrate a monolithic telecom C-band single-photon platform based on low-density InAs/InP quantum dots grown on an InGaAsP/InP distributed Bragg reflector, with simulated upw…
Telecom-band site-controlled quantum dots with engineered low fine-structure splitting
Christian C. Ruiz Madera, Paweł Holewa, Paweł Wyborski +3
Deterministic quantum light sources emitting at telecom wavelengths with vanishing fine-structure splitting (FSS) are essential components for scalable quantum communication. While…
Efficient passivation of III-As(P) photonic interfaces
Yury Berdnikov, Paweł Holewa, Aurimas Sakanas +7
Surface effects can significantly impact the performance of nanophotonic and quantum photonic devices, especially as the device dimensions are reduced. In this work, we propose and…
InAs/InP quantum dot based C-Band all-fiber plug-and-play triggered single-photon source integrated using micro-transfer printing
Marek G. Mikulicz, Paweł Mrowiński, Paweł Holewa +3
Fiber-based long-haul quantum communication would greatly benefit from a robust and deterministically integrated source of quantum state. Here, we report the design, fabrication, a…
Monolithic Integration of Sub-50 nm III-V Nano-Heterostructures on Si (001) for Telecom Photonics
Alisha Nanwani, Paweł Wyborski, Michael S. Seifner +5
The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending…
Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Maciej Jaworski, Paweł Mrowiński, Marek Burakowski +5
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indisting…
Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Marek Burakowski, Paweł Holewa, Aurimas Sakanas +6
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respec…
On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
Daniel A. Vajner, Paweł Holewa, Emilia Zięba-Ostój +10
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum c…
High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Paweł Holewa, Daniel A. Vajner, Emilia Zięba-Ostój +14
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-ph…
Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
Yury Berdnikov, Pawel Holewa, Shima Kadkhodazadeh +6
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms…
Observation of room temperature excitons in an atomically thin topological insulator
Marcin Syperek, Raul Stühler, Armando Consiglio +10
Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly ref…
Optimization of heterogeneously integrated InP-Si on-chip photonic components
P. Mrowiński, P. Holewa, A. Sakanas +3
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum d…
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
Paweł Holewa, Shima Kadkhodazadeh, Michał Gawełczyk +5
The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom win…
Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
Paweł Holewa, Aurimas Sakanas, Uğur Meriç Gür +8
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assemb…
Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
Paweł Holewa, Marek Burakowski, Anna Musiał +6
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been…
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Paweł Holewa, Michał Gawełczyk, Aleksander Maryński +5
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with…
Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths
P. Holewa, M. Gawełczyk, C. Ciostek +4
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers…
Thresholdless transition to coherent emission at telecom wavelengths from coaxial nanolasers
Soren Kreinberg, Kaisa Laiho, Frederik Lohof +5
The ongoing miniaturization of semiconductor lasers has enabled ultra-low threshold devices and even provided a path to approach thresholdless lasing with linear input-output chara…
Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography
Artem Shikin, Elizaveta Lebedkina, Czcibor Ciostek +6
We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applicati…
Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
Nicole Srocka, Anna Musiał, Philipp-Immanuel Schneider +8
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of p…