Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties

Abstract

The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission efficiency in the required spectral range. However, fabricating versatile InAs/InP QD-based quantum emitters is challenging, especially as these QDs typically have asymmetric profiles in the growth plane, resulting in a substantial bright-exciton fine structure splitting (FSS). This hinders the generation of entangled photon pairs and thus, compromises the versatility of InAs/InP QDs. We overcome this by implementing droplet epitaxy (DE) synthesis of low surface density (2.8$\times$10${}^8$ cm${}^{-2}$) InAs QDs on an (001)-oriented InP substrate. The resulting QDs are located in etched pits, have concave bases, and most importantly, have symmetric in-plane profiles. We provide an analytical model to explain the kinetics of pit formation and QD base shape modification. Our theoretical calculations of electronic states reveal the properties of neutral and charged excitons and biexcitons confined in such QDs, which agree with the optical investigations of individual QDs. The optical response of QD ensembles suggests that FSS may indeed be negligible, as reflected in the vanishing degree of linear polarization. However, single QD spectrum gathered from an etched mesa shows moderate FSS of (50$\pm$5) $\mu$eV that we link to destructive changes made in the QD environment during the post-growth processing. Finally, we show that the studied DE QDs provide a close-to-ideal single-photon emission purity of (92.5$\pm$7.5) $\%$ in the third telecom window.

arXiv commentv2: an updated version of the manuscript

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• Omnidirectional gradient force optical trapping in dielectric nanocavities by inverse design
• Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
• Optimization of heterogeneously integrated InP-Si on-chip photonic components
• Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
• Monolithic Integration of Sub-50 nm III-V Nano-Heterostructures on Si (001) for Telecom Photonics
• Spin properties in droplet epitaxy-grown telecom quantum dots