Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy

Abstract

By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 micrometer by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of barrier choice.

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Cited by in corpus (5)

• Universal growth scheme for entanglement-ready quantum dots
• Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
• Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m
• Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A
• Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band