37 citations · 182 across the 16 of their papers we have counts for
17 papers
Local droplet etching-assisted quantum dot epitaxy for telecom C-band quantum light emitters
Karolina E. Połczyńska, Paweł Wyborski, Michał Gawełczyk +4
Significant progress in quantum light sources for quantum communication applications requires reproducible and symmetric quantum emitters acting as single-photon sources capable of…
Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots
Anna Musiał, Maja Wasiluk, Katarzyna Roszak +6
Hereby, we study the generation of pairs of polarization-entangled photons at telecom C-band by biexciton-exciton cascade from non-resonantly excited epitaxial InAs/InP quantum dot…
Coherent Control of Quantum-Dot Spins with Cyclic Optical Transitions
Zhe Xian Koong, Urs Haeusler, Jan M. Kaspari +14
Solid-state spins are promising as interfaces from stationary qubits to single photons for quantum communication technologies. Semiconductor quantum dots have excellent optical coh…
Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band
A. Musiał, M. Wasiluk, M. Gawełczyk +4
We demonstrate that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlA…
Disorder-resilient transport through dopant arrays in silicon
Michał Gawełczyk, Garnett W. Bryant, Michał Zieliński
Chains and arrays of phosphorus donors in silicon have recently been used to demonstrate dopant-based quantum simulators. The dopant disorder present in fabricated devices must be…
Tuning the coherent interaction of an electron qubit and a nuclear magnon
Noah Shofer, Leon Zaporski, Martin Hayhurst Appel +9
A central spin qubit interacting coherently with an ensemble of proximal spins can be used to engineer entangled collective states or a multi-qubit register. Making full use of thi…
Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Wojciech Rudno-Rudziński, Michał Gawełczyk, Paweł Podemski +6
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirec…
Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
Paweł Wyborski, Michał Gawełczyk, Paweł Podemski +6
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in…
Beyond the four-level model: Dark and hot states in quantum dots degrade photonic entanglement
Barbara Ursula Lehner, Tim Seidelmann, Gabriel Undeutsch +9
Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconduc…
Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
Michał Gawełczyk, Michał Zieliński
We utilize Bardeen's tunneling theory to calculate intra- and interorbital hopping integrals between phosphorus donors in silicon using known orbital wave functions. While the two-…
Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
M. Gawełczyk, P. Wyborski, P. Podemski +3
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such object…
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
Paweł Holewa, Shima Kadkhodazadeh, Michał Gawełczyk +5
The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom win…
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Paweł Holewa, Michał Gawełczyk, Aleksander Maryński +5
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with…
Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths
P. Holewa, M. Gawełczyk, C. Ciostek +4
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers…
Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm
Ł. Dusanowski, M. Gawełczyk, J. Misiewicz +3
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths.…
Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
M. Syperek, Ł. Dusanowski, M. Gawełczyk +5
Exciton spin and related optical polarization in self-assembled InAs/InGaAlAs/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of po…
Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
M. Gawełczyk, M. Syperek, A. Maryński +8
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Consi…