A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices
arXiv:1611.07654 · doi:10.1038/s41467-017-00987-6
Abstract
Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce SiN photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into SiN waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. SiN waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices
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