Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si${}_3$N${}_4$ quantum photonic circuits

Abstract

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\text{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si${}_3$N${}_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si${}_3$N${}_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

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