Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

Abstract

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.

16 pages, 4 figures

References in corpus (10)

• Quantum Cryptography
• Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal
• Review: Semiconductor Quantum Light Sources
• Non-resonant dot-cavity coupling and its applications in resonant quantum dot spectroscopy
• Spontaneous two photon emission from a single quantum dot
• Excitons, biexcitons and trions in self-assembled (In,Ga)As/GaAs quantum dots: Recombination energies, polarization and radiative lifetimes versus dot height
• Quantum key distribution using a triggered quantum dot source emitting near 1.3 microns
• Optical characteristics of single wavelength-tunable InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 um
• Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots
• Sub-nanosecond Electro-optic Modulation of Triggered Single Photons from a Quantum Dot

Cited by in corpus (39)

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• Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide
• Advances in silicon quantum photonics
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• Bright Purcell enhanced single-photon source in the telecom O-band based on a quantum dot in a circular Bragg grating
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• Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
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• On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
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• Large Stark Tuning of InAs/InP Quantum Dots
• InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
• Nanoantennas for ultrabright single photon sources
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• Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m
• Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures
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• Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths
• Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
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• Impact of the dark path on quantum dot single photon emitters in small cavities
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