Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
arXiv:1811.01346 · doi:10.1103/PhysRevB.100.115310
Abstract
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.
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Cited by in corpus (8)
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- Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band
- Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
- Hole spin-flip transitions in a self-assembled quantum dot
- Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for Single-Photon Sources emitting in the Telecommunication O-Band
- Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
- Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band