3 papers
cond-mat.mes-hall2019
Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
Paweł Podemski, Anna Musiał, Krzysztof Gawarecki +11
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spec…
cond-mat.mes-hall2018
Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
Paweł Mrowiński, Anna Musiał, Krzysztof Gawarecki +8
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs qua…
cond-mat.mes-hall2018
Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
Nicole Srocka, Anna Musiał, Philipp-Immanuel Schneider +8
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of p…