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20182020
most citedEnhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

40 citations · 87 across the 4 of their papers we have counts for

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cond-mat.mes-hall2019★ 9 cited

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

Paweł Podemski, Anna Musiał, Krzysztof Gawarecki +11

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spec…