36 citations · 48 across the 2 of their papers we have counts for
8 papers
Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for Single-Photon Sources emitting in the Telecommunication O-Band
Jan Große, Pawel Mwrowinski, Nicole Srocka +1
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InG…
Deterministically fabricated strain-tunable quantum dot single-photon sources emitting in the telecom O-band
Nicole Srocka, Pawel Mrowiński, Jan Große +3
Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter l…
Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band
N. Srocka, P. Mrowiński, J. Große +4
In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron…
Plug&play fibre-coupled 73 kHz single-photon source operating in the telecom O-band
Anna Musial, Kinga Zolnacz, Nicole Srocka +18
A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange.…
Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
Paweł Podemski, Anna Musiał, Krzysztof Gawarecki +11
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spec…
Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
Paweł Mrowiński, Anna Musiał, Krzysztof Gawarecki +8
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs qua…