Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

Abstract

We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In${}_{0.53}$Al${}_{0.24}$Ga${}_{0.23}$As self-assembled QDs with emission wavelengths at about 1.6 $\mu$m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field are observed from which the corresponding $g$ factors are determined. The electron $g$ factor of about $-1.9$ has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the $g$ factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.

7 pages, 5 figures

References in corpus (8)

• Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots
• Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots
• Tunable effective g-factor in InAs nanowire quantum dots
• Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells
• Lande g-tensor in semiconductor nanostructures
• Electrically-tunable hole g-factor of an optically-active quantum dot for fast spin rotations
• Size dependent exciton g-factor in self-assembled InAs/InP quantum dots
• All-optical implementation of a dynamic-decoupling protocol for hole spins in (In,Ga)As quantum dots

Cited by in corpus (14)

• Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
• Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n-type GaAs
• Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
• Spin dynamics and magnetic-field-induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment
• Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots
• Electron and hole g tensors of neutral and charged excitons in single quantum dots by high-resolution photocurrent spectroscopy
• Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
• Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths
• Long-range exchange interaction between spin qubits mediated by a superconducting link at finite magnetic field
• Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
• Initialization of Neutral and Charged Exciton Spin States in a Telecom-Emitting Quantum Dot
• Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
• Spin properties in droplet epitaxy-grown telecom quantum dots
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots