Lande g-tensor in semiconductor nanostructures

Abstract

Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing the mapping of the g-tensor modulus for the s and p shells. We found that the g-tensors for the s and p shells show a very different behavior. The s-state in being more localized allows the probing of the confining potential details by sweeping the magnetic field orientation from the growth direction towards the in-plane direction. As for the p-state, we found that the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. These results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed, in addition to the assessment of the g-tensor, which is of fundamental importance for the implementation of spin related applications.

4 pages, 4 figures

References in corpus (9)

• Quantum Computation with Quantum Dots
• Zeeman energy and spin relaxation in a one-electron quantum dot
• Tunable effective g-factor in InAs nanowire quantum dots
• Single-Electron Charging and Coulomb Interaction in InAs Self-Assembled Quantum Dot Arrays
• Studies of spin-orbit scattering in noble-metal nanoparticles using energy level tunneling spectroscopy
• Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations
• g-factor engineering and control in self-assembled quantum dots
• Field Dependence of the Electron Spin Relaxation in Quantum Dots
• Measurements of strongly-anisotropic g-factors for spins in single quantum states

Cited by in corpus (14)

• Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot
• Voltage tunability of single spin-states in a quantum dot
• Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
• Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
• The limits of Near Field Immersion Microwave Microscopy evaluated by imaging bilayer graphene Moiré patterns
• Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots
• VASP2KP: kp models and Lande g-factors from ab initio calculations
• From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots
• Electron and hole g tensors of neutral and charged excitons in single quantum dots by high-resolution photocurrent spectroscopy
• Anisotropic spin splitting of the electron ground state in InAs quantum dots
• Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
• Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study
• Cloaking the magnons
• Determination of spin polarization in InAs/GaAs self-assembled quantum dots