Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations

Abstract

Atomistic pseudopotential plus configuration interaction calculations of the energy needed to charge dots by either electrons or holes are described, and contrasted with the widely used, but highly simplified two-dimensional parabolic effective mass approximation (2D-EMA). Substantial discrepancies are found, especially for holes, regarding the stable electronic configuration and filling sequence which defies both Hund's rule and the Aufbau principle.

arXiv comment14 pages, 9 figures

References in corpus (12)

• Excitation Spectra of Circular Few-Electron Quantum Dots
• Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots
• Shell structure and electron-electron interaction in self-assembled InAs quantum dots
• Carrier-Carrier Correlations in an Optically Excited Single Semiconductor Quantum Dot
• Optical spectroscopy of single quantum dots at tunable positive, neutral and negative charge states
• Multiband theory of multi-exciton complexes in self-assembled quantum dots
• Quantum dots in high magnetic fields: Rotating-Wigner-molecule versus composite-fermion approach
• Coulomb-interaction induced incomplete shell filling in the hole system of InAs quantum dots
• Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition
• Magneto-capacitance probing of the many-particle states in InAs dots
• Addition energies in semiconductor quantum dots: Role of electron-electron interaction
• Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes

Cited by in corpus (11)

• Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots
• Lande g-tensor in semiconductor nanostructures
• Spin-orbit coupling and magnetic field dependence of carriers states in a self-assembled quantum dot
• Linear scaling approach for atomistic calculation of excitonic properties of 10-million-atom nanostructures
• Calculation of conduction-to-conduction and valence-to-valence transitions between bound states in (In,Ga)As/GaAs quantum dots
• Atomistic theory of spin relaxation in self-assembled In${}_{1-x}$Ga${}_x$As/GaAs quantum dots at zero magnetic field
• Giant optical anisotropy in cylindrical self-assembled InAs/GaAs quantum rings
• Peculiar spectra of dark and bright excitons in alloyed nanowire quantum dots
• Conditions for the occurrence of Coulomb blockade in phosphorene quantum dots at room temperature
• Determination of spin polarization in InAs/GaAs self-assembled quantum dots
• The Coulomb-interaction-induced breaking of the Aufbau principle for hole charging of InGaAs/GaAs quantum dots