Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes

Abstract

We study the orbital and spin configurations of up to six electrons or holes charged into self-assembled InAs/GaAs quantum dots via single-particle pseudopotential and many-particle configuration interaction method. We find that while the charging of {\it electrons} follows both Hund's rule and the Aufbau principle, the charging of {\it holes} follows a non-trivial charging pattern which violates both the Aufbau principle and Hund's rule, and is robust against the details of the quantum dot size. The predicted hole charging sequence offers a new interpretation of recent charging experiments.

References in corpus (4)

• Excitation Spectra of Circular Few-Electron Quantum Dots
• Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots
• Optical spectroscopy of single quantum dots at tunable positive, neutral and negative charge states
• Coulomb-interaction induced incomplete shell filling in the hole system of InAs quantum dots

Cited by in corpus (11)

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• Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations
• Calculation of conduction-to-conduction and valence-to-valence transitions between bound states in (In,Ga)As/GaAs quantum dots
• Atomistic theory of spin relaxation in self-assembled In${}_{1-x}$Ga${}_x$As/GaAs quantum dots at zero magnetic field
• Giant optical anisotropy in cylindrical self-assembled InAs/GaAs quantum rings
• Correlation Effects in Quantum Dot Wave Function Imaging
• Charging of colloidal nanoplatelets: effect of Coulomb repulsion on spin and optoelectronic properties
• The Coulomb-interaction-induced breaking of the Aufbau principle for hole charging of InGaAs/GaAs quantum dots