Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
arXiv:1710.05792 · doi:10.1103/PhysRevB.99.035202
Abstract
Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that approaches the ns regime at room temperature. Besides important insights into nonradiative recombination pathways, our findings disclose a rich spin physics in novel epitaxial structures directly grown on a conventional Si substrate. This introduces a viable route towards the synergic enrichment of the group IV semiconductor toolbox with advanced spintronics and photonic capabilities.
References in corpus (13)
- Topological Insulators with Inversion Symmetry
- A programmable two-qubit quantum processor in silicon
- Room temperature spin-orbit torque switching induced by a topological insulator
- Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
- Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
- Elemental topological Dirac semimetal: α-Sn on InSb(111)
- An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
- Majorana Fermions in Ge/Si Hole Nanowires
- Intrinsic Spin Lifetime of Conduction Electrons in Germanium
- Donor-driven spin relaxation in multi-valley semiconductors
- Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
- Non-local opto-electrical spin injection and detection in germanium at room temperature
- Optical orientation of electron spins and valence band spectroscopy in germanium