activity
20112024
most citedOptical spin injection and spin lifetime in Ge heterostructures

103 citations · 287 across the 9 of their papers we have counts for

collaborators

10 papers

physics.app-ph2024

THz Higher-Order Topological Photonics in Ge-on-Si Heterostructures

Ian Colombo, Pietro Minazzi, Emiliano Bonera +2

We design germanium-based higher-order topological cavities for terahertz applications by breaking the symmetry of a two-dimensional photonic crystal following the Su-Schrieffer-He…

cond-mat.mes-hall2022★ 9 cited

Quantum spin Hall phase in GeSn heterostructures on silicon

B. M. Ferrari, F. Marcantonio, F. Murphy-Armando +2

Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontane…

cond-mat.mes-hall2022★ 4 cited

Optical manipulation of the Rashba effect in germanium quantum wells

S. Rossi, E. Talamas Simola, M. Raimondo +6

The Rashba effect in Ge/SiGe multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to…

cond-mat.mtrl-sci2017★ 35 cited

Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon

Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello +6

Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semico…

cond-mat.mtrl-sci2017

Optically reconfigurable polarized emission in Germanium

Sebastiano De Cesari, Roberto Bergamaschini, Elisa Vitiello +2

Light polarization can conveniently encode information. Yet, the ability to steer polarized optical fields is notably demanding but crucial to develop practical methods for data en…

cond-mat.mtrl-sci2016★ 52 cited

Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers

Fabio Pezzoli, Anna Giorgioni, David Patchett +1

GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for t…

cond-mat.mtrl-sci2016★ 36 cited

Giant g factor tuning of long-lived electron spins in Ge

Anna Giorgioni, Stefano Paleari, Stefano Cecchi +5

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrast…

cond-mat.mes-hall2015★ 13 cited

Optical orientation of electron spins and valence band spectroscopy in germanium

Fabio Pezzoli, Andrea Balocchi, Elisa Vitiello +2

We have investigated optical orientation in the vicinity of the direct gap of bulk germanium. The electron spin polarization is studied via polarization-resolved photoluminescence…

cond-mat.mtrl-sci2013★ 35 cited

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

F. Pezzoli, L. Qing, A. Giorgioni +4

Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control ov…

cond-mat.mtrl-sci2011★ 103 cited

Optical spin injection and spin lifetime in Ge heterostructures

F. Pezzoli, F. Bottegoni, D. Trivedi +9

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allow…