Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well

Abstract

The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.

To be published in Phys. Rev. Lett

References in corpus (6)

• Dissipationless Quantum Spin Current at Room Temperature
• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Emergence of the persistent spin helix in semiconductor quantum wells
• Spin-Hall transport of heavy holes in III-V semiconductor quantum wells
• Spin Orientation of Holes in Quantum Wells
• Spin Hall Conductance of the Two Dimensional Hole Gas in a Perpendicular Magnetic Field

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