Experimental realization of a ballistic spin interferometer based on the Rashba effect using a nanolithographically defined square loop array

Abstract

The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In${}_{0.52}$Al${}_{0.48}$As/In${}_{0.53}$Ga${}_{0.47}$As/In${}_{0.52}$Al${}_{0.48}$As quantum wells. In this experiment, we demonstrate electron spin precession in quasi-one-dimensional channels that is caused by the Rashba effect. It turned out that the spin precession angle $\theta$ was gate-controllable by more than 0.75$\pi$ for a sample with $L=1.5\mu$m, where $L$ is the side length of the SL. Large controllability of $\theta$ by the applied gate voltage as such is a necessary requirement for the realization of the spin FET device proposed by Datta and Das [Datta {\it et. al.}, Appl. Phys. Lett. {\bf 56}, 665 (1990)] as well as for the manipulation of spin qubits using the Rashba effect.

4pages, 4figures, submitted to Phys. Rev. Lett

References in corpus (2)

• Rashba effect induced localization in quantum networks
• Electron spin interferometry using a semiconductor ring structure

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