Electron spin interferometry using a semiconductor ring structure

Abstract

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly polarized light on one arm establishes dynamic nuclear polarization which acts as a local effective magnetic field on electron spins due to the hyperfine interaction. This local field causes one spin packet to precess faster than the other, thereby controlling the spin interference when the two packets are combined.

4 pages, 2 figures

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• Stability of spintronic devices based on quantum ring networks
• Geometric phases in semiconductor spin qubits: Manipulations and decoherence
• Magnetoconductance properties of rectangular arrays of spintronic quantum rings
• Quantum rings with time dependent spin-orbit coupling: Rabi oscillations, spintronic Schrodinger-cat states, and conductance properties
• Interference induced preparation of spinpolarized electrons in a three-terminal quantum ring
• Two-dimensional quantum rings with oscillating spin-orbit interaction strength: A wave function picture
• Spin Control of Drifting Electrons using Local Nuclear Polarization in Ferromagnet/Semiconductor Heterostructures
• Anisotropic spin relaxation in $n$-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei
• Spin dephasing due to a random Berry phase
• Design and control of spin gates in two quantum dots arrays
• Rashba interferometers: Spin-dependent single and two-electron interference
• Oscillating spin-orbit interaction as a source of spin-polarized wave packets in two-terminal nanoscale devices