Spatial Imaging of Magnetically Patterned Nuclear Spins in GaAs
arXiv:cond-mat/0303448 · doi:10.1103/PhysRevB.68.041307
Abstract
We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope with approximately 1 micron spatial resolution uses electron spin precession to directly image the GaAs nuclear polarization. These measurements indicate that the polarization varies from a maximum under magnetic mesas to zero several microns from the mesa perimeter, resulting in large (10**4 T/m) effective field gradients. The results reveal a flexible scheme for lateral engineering of spin-dependent energy landscapes in the solid state.
Submitted to Physical Review B Rapid Communications. 18 pages, 4 figures
References in corpus (6)
- Quantum Computation with Quantum Dots
- Optical manipulation of nuclear spin by a two-dimensional electron gas
- Spin relaxation of conduction electrons in bulk III-V semiconductors
- Spin diffusion in doped semiconductors
- Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
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