Drift and Diffusion of Spins Generated by the Spin Hall Effect

Abstract

Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals that spin accumulation observed in transverse arms develops due to longitudinal drift of spin polarization produced at the sample boundaries. One- and two-dimensional drift-diffusion modeling is used to explain these features, providing a more complete understanding of observations of spin accumulation and the spin Hall effect.

9 pages, 3 figures

References in corpus (9)

• Direct electronic measurement of the spin Hall effect
• Current induced electron spin polarization in strained semiconductors
• On A Proper Definition of Spin Current
• Current-Induced Polarization and the Spin Hall Effect at Room Temperature
• Generating Spin Currents in Semiconductors with the Spin Hall Effect
• Spin Accumulation in the Extrinsic Spin Hall Effect
• Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors
• Spatial Imaging of Magnetically Patterned Nuclear Spins in GaAs
• Spin generation away from boundaries by nonlinear transport

Cited by in corpus (6)

• Quantum transport in Rashba spin-orbit materials: A review
• Optical detection of long electron spin transport lengths in a monolayer semiconductor
• Spin dynamics in high-mobility two-dimensional electron systems
• Hanle Effect near Boundaries
• Steady-state spin densities and currents
• Effect of boundary scattering on spin-hall effect