Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum
arXiv:2008.12523 · doi:10.1103/PhysRevB.103.085309
Abstract
Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the -linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a -cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable -linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent -linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.
arXiv comment17 pages, 4 figures
References in corpus (38)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Berry Phase Effects on Electronic Properties
- Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
- Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
- Universal Intrinsic Spin-Hall Effect
- New Perspectives for Rashba Spin-Orbit Coupling
- Non-ballistic spin field-effect transistor
- A CMOS silicon spin qubit
- Emergence of the persistent spin helix in semiconductor quantum wells
- Comparison of two methods for describing the strain profiles in quantum dots
- Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots
- Spin Hall effect transistor
- Spin relaxation and decoherence of holes in quantum dots
- Fast two-qubit logic with holes in germanium
- Rashba spin splitting in two-dimensional electron and hole systems
- Ge hole spin qubit
- Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
- Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- Intrinsic Spin Hall Effect in the Two Dimensional Hole Gas
- Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
- Dissipation effects in spin-Hall transport of electrons and holes
- Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
- Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
- Spin-orbit splitting of valence subbands in semiconductor nanostructures
- Spin Hall effect of conserved current: Conditions for a nonzero spin Hall current
- Light effective hole mass in undoped Ge/SiGe quantum wells
- Spin-injection Hall effect in a planar photovoltaic cell
- Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
- Prediction of large linear-in-k spin splitting for holes in the 2D GaAs/AlAs system
- Supercoupling between heavy-hole and light-hole states in self-assembled quantum dots
- Two-dimensional hole precession in an all-semiconductor spin field effect transistor
- Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
- Photoluminescence pressure coefficients of InAs/GaAs quantum dots
- Anomalous spin precession and spin Hall effect in semiconductor quantum wells
- Spin Hall and longitudinal conductivity of a conserved spin current in two dimensional heavy-hole gases
- Current-induced Spin Polarization in Two-Dimensional Hole Gas
- Hole Spin Helix: Anomalous Spin Diffusion in Anisotropic Strained Hole Quantum Wells
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- Hole spin manipulation in inhomogeneous and non-separable electric fields
- Planar Josephson junctions in germanium: Effect of cubic spin-orbit interaction
- Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
- High-fidelity spin qubit shuttling via large spin-orbit interaction
- Majorana zero modes in gate-defined germanium hole nanowires
- The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium
- Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport
- Anisotropic -tensors in hole quantum dots: The role of the transverse confinement direction
- An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells
- Spin splitting in low-symmetry quantum wells beyond Rashba and Dresselhaus terms
- Spin-orbit interactions may relax the rigid conditions leading to flat bands
- Two-band description of the strong `spin'-orbit coupled one-dimensional hole gas in a cylindrical Ge nanowire
- Electrical manipulation of a hole `spin'-orbit qubit in nanowire quantum dot: the nontrivial magnetic field effects
- Photodriven germanium hole qubit
- Matter with apparent and hidden spin physics
- Role of anisotropic confining potential and elliptical driving in dynamics of a Ge hole qubit
- Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots