Spin-injection Hall effect in a planar photovoltaic cell

Abstract

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal.

14 pages, 4 figures

References in corpus (8)

• Direct electronic measurement of the spin Hall effect
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Coherent spin transport through a 350-micron-thick Silicon wafer
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