Efficient conversion of light to charge and spin in Hall-bar microdevice

Abstract

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$\mu$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.

References in corpus (10)

• Anomalous Hall effect
• Spin torque switching with the giant spin Hall effect of tantalum
• Direct electronic measurement of the spin Hall effect
• Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
• Engineering ultrafast spin currents and terahertz transients by magnetic heterostructures
• Spin Hall effect transistor
• Magnetoresistance due to edge spin accumulation
• Spin-injection Hall effect in a planar photovoltaic cell
• Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures
• All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

Cited by in corpus (2)

• Fast optical control of spin in semiconductor interfacial structures
• Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction