92 citations · 250 across the 9 of their papers we have counts for
9 papers
Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
J. J. F. Heitz, L. Nádvorník, V. Balos +11
We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by u…
Atomically sharp domain walls in an antiferromagnet
Filip Krizek, Sonka Reimers, Zdeněk Kašpar +18
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to application…
Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs
Tomas Janda, Joao Godinho, Tomas Ostatnicky +23
Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microsco…
Molecular beam epitaxy of CuMnAs
Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka +13
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth…
Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
Zdeněk Kašpar, Miloslav Surýnek, Jan Zubáč +16
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the de…
Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
H. Reichlova, V. Novak, Y. Kurosaki +9
We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tA…
Efficient conversion of light to charge and spin in Hall-bar microdevice
L. Nádvorník, J. A. Haigh, K. Olejník +4
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. I…
Electrical detection of magnetization reversal without auxiliary magnets
K. Olejník, V. Novák, J. Wunderlich +1
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memo…
The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices
A. W. Rushforth, K. Výborný, C. S. King +11
We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield dir…