Electrical detection of magnetization reversal without auxiliary magnets
arXiv:1506.00400 · doi:10.1103/PhysRevB.91.180402
Abstract
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)As epilayer is set either parallel or antiparallel to a current-induced non-equilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2\% at current density of A cm.
5 pages, 4 figures
References in corpus (5)
Cited by in corpus (14)
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