Molecular beam epitaxy of CuMnAs

Abstract

We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

arXiv comment10 pages, 8 figures and supplementary material

References in corpus (9)

• Electrical switching of an antiferromagnet
• Relativistic Neel-order fields induced by electrical current in antiferromagnets
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Imaging current-induced switching of antiferromagnetic domains in CuMnAs
• Current-polarity dependent manipulation of antiferromagnetic domains
• Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs
• Dynamics of Magnetoelectric Reversal of Antiferromagnetic Domain
• Substrate temperature changes during MBE growth of GaMnAs
• Tetragonal CuMnAs alloy: role of defects

Cited by in corpus (8)

• Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
• Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs
• Defect-driven antiferromagnetic domain walls in CuMnAs films
• Electrical transport properties of bulk tetragonal CuMnAs
• Low-Energy Switching of Antiferromagnetic CuMnAs/ GaP Using sub-10 Nanosecond Current Pulses
• Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams
• Probing the Manipulation of Antiferromagnetic Order in CuMnAs Films Using Neutron Diffraction
• Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory