activity
20192021
most citedShadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

74 citations · 107 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2021★ 12 cited

Superconductivity and parity preservation in as-grown In islands on InAs nanowires

Martin Saurbrey Bjergfelt, Damon J. Carrad, Thomas Kanne +4

We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In…

cond-mat.mtrl-sci2020

Effect of Cold Sintering Process (CSP) on the Electro-Chemo-Mechanical Properties of Gd-doped Ceria (GDC)

Ahsanul Kabir, Daoyao Ke, Salvatore Grasso +2

In this report, the effect of the cold sintering process (CSP) on the electro-chemo-mechanical properties of 10 mol% Gd-doped ceria (GDC) is investigated. High purity nanoscale GDC…

cond-mat.mtrl-sci2020★ 1 cited

Transparent Gatable Superconducting Shadow Junctions

Sabbir A. Khan, Charalampos Lampadaris, Ajuan Cui +14

Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy pro…

cond-mat.mtrl-sci2019★ 20 cited

Molecular beam epitaxy of CuMnAs

Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka +13

We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth…

cond-mat.mes-hall2019★ 74 cited

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Damon J. Carrad, Martin Bjergfelt, Thomas Kanne +6

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable…