Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Abstract

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor devices

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• Full parity phase diagram of a proximitized nanowire island
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• Fusion rules in a Majorana single-charge transistor
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• Experimental review on Majorana zero-modes in hybrid nanowires
• Superconductivity and parity preservation in as-grown In islands on InAs nanowires
• Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids
• First Principles Assessment of CdTe as a Tunnel Barrier at the $\alpha$-Sn/InSb Interface
• InAs/MoRe hybrid semiconductor/superconductor nanowire devices
• Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
• Impact of junction length on supercurrent resilience against magnetic field in InSb-Al nanowire Josephson junctions
• Nonlinearity of transparent SNS weak links decreases sharply with length
• Subgap transport in superconductor--semiconductor hybrid islands: Weak and strong coupling regimes
• Subgap states in semiconductor-superconductor devices for quantum technologies: Andreev qubits and minimal Majorana chains
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