126 citations · 202 across the 2 of their papers we have counts for
4 papers
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…
Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices
Damon J. Carrad, Martin Bjergfelt, Thomas Kanne +6
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable…
Kondo-Enhanced Andreev Tunneling in InAs Nanowire Quantum Dots
T. Sand-Jespersen, J. Paaske, B. M. Andersen +7
We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation o…
Kondo physics in tunable semiconductor nanowire quantum dots
T. S. Jespersen, M. Aagesen, C. Soerensen +2
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, an…