829 citations · 1.5k across the 13 of their papers we have counts for
13 papers
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…
Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices
Damon J. Carrad, Martin Bjergfelt, Thomas Kanne +6
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable…
Using light and heat to controllably switch and reset disorder configuration in nanoscale devices
A. M. See, M. Aagesen, P. E. Lindelof +2
Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorde…
A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor
A. M. See, O. Klochan, A. P. Micolich +3
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport t…
Single nanowire solar cells beyond the Shockley-Queisser limit
Peter Krogstrup, Henrik Ingerslev Jørgensen, Martin Heiss +5
Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal…
Advances in the theory of III-V Nanowire Growth Dynamics
Peter Krogstrup, Henrik I. Jørgensen, Erik Johnson +6
Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With incr…
The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots
A. M. See, I. Pilgrim, B. C. Scannell +10
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, lead…
Fabrication of undoped AlGaAs/GaAs electron quantum dots
Andrew M. See, Oleh Klochan, Adam P. Micolich +3
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic pers…
AlGaAs/GaAs single electron transistors fabricated without modulation doping
A. M. See, O. Klochan, A. R. Hamilton +3
We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillat…
Ferromagnetic proximity effect in F-QDot-S device
L. Hofstetter, S. Csonka, A. Geresdi +3
Ferromagnetic proximity effect is studied in InAs nanowire (NW) based quantum dots (QD) strongly coupled to a ferromagnetic (F) and a superconducting (S) lead. The influence of the…
Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots
S. Csonka, L. Hofstetter, F. Freitag +5
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to…
Kondo-Enhanced Andreev Tunneling in InAs Nanowire Quantum Dots
T. Sand-Jespersen, J. Paaske, B. M. Andersen +7
We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation o…
Kondo physics in tunable semiconductor nanowire quantum dots
T. S. Jespersen, M. Aagesen, C. Soerensen +2
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, an…