Advances in the theory of III-V Nanowire Growth Dynamics

Abstract

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

63 pages, 25 figures and 4 tables. Some details are explained more carefully in this version aswell as a new figure is added illustrating various facets of a WZ crystal

References in corpus (7)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Single nanowire solar cells beyond the Shockley-Queisser limit
• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• Twinning superlattices in indium phosphide nanowires
• Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits
• Growth and optical properties of axial hybrid III-V/Si nanowires
• Avalanche amplification of a single exciton in a semiconductor nanowire

Cited by in corpus (13)

• Epitaxy of Semiconductor-Superconductor nanowires
• Field effect enhancement in buffered quantum nanowire networks
• In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
• Untangling the role of oxide in Ga-assisted growth of GaAs nanowires on Si substrates
• Diameter evolution of selective area grown Ga-assisted GaAs nanowires
• Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction
• Improved effective equation for the Rashba spin-orbit coupling in semiconductor nanowires
• Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires
• Selective Area Growth Rates of III-V Nanowires
• Au-Assisted Substrate-Faceting for Inclined Nanowire Growth
• Non equilibrium phase transition with gravitational-like interaction in a cloud of cold atoms
• Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si
• Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)