activity
20132021
most citedEpitaxy of Semiconductor-Superconductor nanowires

495 citations · 903 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2021★ 12 cited

Superconductivity and parity preservation in as-grown In islands on InAs nanowires

Martin Saurbrey Bjergfelt, Damon J. Carrad, Thomas Kanne +4

We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In…

cond-mat.mes-hall2020★ 86 cited

Epitaxial Pb on InAs nanowires

Thomas Kanne, Mikelis Marnauza, Dags Olsteins +8

Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exot…

cond-mat.mes-hall2019★ 74 cited

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Damon J. Carrad, Martin Bjergfelt, Thomas Kanne +6

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable…

cond-mat.mes-hall2017★ 87 cited

Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection

Joachim E. Sestoft, Thomas Kanne, Aske Nørskov Gejl +11

The combination of strong spin-orbit coupling, large -factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nano…

cond-mat.mtrl-sci2014★ 495 cited

Epitaxy of Semiconductor-Superconductor nanowires

P. Krogstrup, N. L. B. Ziino, W. Chang +6

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semicond…

cond-mat.mtrl-sci2013★ 2 cited

Epitaxial aluminum contacts to InAs nanowires

N. L. B. Ziino, P. Krogstrup, M. H. Madsen +5

We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact,…

cond-mat.mes-hall2013★ 16 cited

Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Sriram Venkatesan, Morten H. Madsen, Herbert Schmid +3

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III a…

cond-mat.mes-hall2013★ 131 cited

Advances in the theory of III-V Nanowire Growth Dynamics

Peter Krogstrup, Henrik I. Jørgensen, Erik Johnson +6

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With incr…