Twinning superlattices in indium phosphide nanowires

Abstract

Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to crystallise in the zinc blende, instead of the commonly found wurtzite crystal structure. More importantly, we demonstrate that we can, by controlling the crystal structure, induce twinning superlattices with long-range order in InP nanowires. We can tune the spacing of the superlattices by the wire diameter and the zinc concentration and present a model based on the cross-sectional shape of the zinc-blende InP nanowires to quantitatively explain the formation of the periodic twinning.

18 pages, 4 figures

References in corpus (4)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• Supercurrent reversal in quantum dots
• Single quantum dot nanowire LEDs
• Equilibrium shapes and energies of coherent strained InP islands

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