Extrinsic doping in group IV hexagonal-diamond type crystals

Abstract

Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on their extrinsic doping capability and on how it compares to those of diamond-like structures. This point is here investigated through numerical simulations conducted in the framework of the Density Functional Theory (DFT). The comparative analysis for group III and V dopant atoms shows that: i) in diamond-type crystals the bulk sites symmetry ($T_d$) is preserved by doping while in hexagonal crystals the impurity site moves towards a higher ($T_d$) or lower ($C_{3v}$) symmetry configuration dependently on the valence of the dopant atoms; ii) for Si and Ge, group III impurities can be more easily introduced in the hexagonal-diamond phase, whose local $C_{3v}$ symmetry better accommodates the three-fold coordination of the impurity, while n-type impurities do not reveal any marked phase preference; iii) for C, both n and p dopants are more stable in the hexagonal-diamond structure than in the the cubic one, but this tendency is much more pronounced for n-type impurities.

References in corpus (8)

• The SIESTA method for ab initio order-N materials simulation
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Cited by in corpus (2)

• Interaction of dopants with the I${}_3$-type basal stacking fault in hexagonal-diamond Si
• Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material