Tunable thermal conductivity in defect engineered nanowires at low temperatures

Abstract

We measure the thermal conductivity ($\kappa$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $\kappa$ arises from the strong localization of phonons in the random superlattice of twin-defects oriented perpendicular to the axis of the NW. We observe significant electronic contribution arising from the surface accumulation layer which gives rise to tunability of $\kappa$ with the application of electrostatic gate and magnetic field. Our devices and measurements of $\kappa$ at different carrier concentrations and magnetic field without introducing structural defects, offer a means to study new aspects of nanoscale thermal transport.

5 pages, 4 figures, URL for supplementary material included in references

References in corpus (4)

• Spin-orbit qubit in a semiconductor nanowire
• Twinning superlattices in indium phosphide nanowires
• Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
• Magnetotransport properties of individual InAs nanowires

Cited by in corpus (7)

• Measuring the thermal conductivity and interfacial thermal resistance of suspended MoS2 using electron beam self-heating technique
• Nonlinear anomalous Hall effects probe topological phase-transitions in twisted double bilayer graphene
• Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
• Multimode laser cooling and ultra-high sensitivity force sensing with nanowires
• Nanoscale electromechanics to measure thermal conductivity, expansion and interfacial losses
• Combination of thermal and electric properties measurement techniques in a single setup suitable for radioactive materials in controlled environments and based on the 3-omega approach
• Enhanced photothermal cooling of nanowires