Magnetotransport properties of individual InAs nanowires

Abstract

We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in diffusive conductors. The weak localization correction is modified to weak anti-localization (WAL) as the gate voltage is increased. We show that the gate voltage can be used to tune the phase coherence length ($l_{\varphi }$) and spin-orbit length ($l_{so}$) by a factor of $\sim$ 2. In the high field and low temperature regime we observe the mobility of devices can be modified significantly as a function of magnetic field. We argue that the role of skipping orbits and the nature of surface scattering is essential in understanding high field magnetotransport in nanowires.

References in corpus (6)

• Tunable Supercurrent Through Semiconductor Nanowires
• One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
• Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
• Imaging Magnetic Focusing of Coherent Electron Waves
• Tunable effective g-factor in InAs nanowire quantum dots
• Kondo physics in tunable semiconductor nanowire quantum dots

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• Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
• Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling
• Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
• Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures
• Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition