Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

Abstract

We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin-orbit coupling is tuned by the gate electrode. The efficiency of the gate tuning of the spin-orbit interaction is higher than those obtained for two-dimensional electron gas, and as high as that for a gate-all-around nanowire metal-oxide-semiconductor field-effect transistor that was previously reported. The spin-orbit interaction is discussed in line with not only conventionally used one-dimensional model but also recently proposed model that considers effects of microscopic band structures of materials.

14 pages, 4 figures

References in corpus (5)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Strong tuning of Rashba spin orbit interaction in single InAs nanowires
• Magnetotransport properties of individual InAs nanowires
• Impact of graphene quantum capacitance on transport spectroscopy
• Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Cited by in corpus (3)

• The Dirac paradox in 1+1 dimensions and its realization with spin-orbit coupled nanowires
• Electron transport in quantum channels with spin-orbit interaction: Effects of the sign of the Rashba coupling and applications to nanowires
• Enhanced Thermoelectricity in Nanowires with inhomogeneous Helical states