Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Abstract

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $c{m}^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

3 pages, 3 figures

References in corpus (5)

• Spin-charge separation and localization in one-dimension
• Correlating the nanostructure and electronic properties of InAs nanowires
• Magnetotransport properties of individual InAs nanowires
• Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
• Spin polarized current generation from quantum dots without magnetic fields

Cited by in corpus (7)

• Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
• InAs nanowire transistors with multiple, independent wrap-gate segments
• Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
• Temperature-dependent electron mobility in InAs nanowires
• Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics
• Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
• Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition