Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
arXiv:1710.06950 · doi:10.1103/PhysRevMaterials.2.025601
Abstract
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of sub-threshold swing and contact resistance that surpasses the best existing p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of the room-temperature thermal limit and comparable with n-InP and n-GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.
arXiv comment6 pages, 2 figures, supplementary available at journal
References in corpus (11)
- Strong tuning of Rashba spin orbit interaction in single InAs nanowires
- Top-gate defined double quantum dots in InAs nanowires
- Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
- Doping incorporation paths in catalyst-free Be-doped GaAs nanowires
- Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems
- InAs nanowire transistors with multiple, independent wrap-gate segments
- Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
- Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry
- Facile fabrication of lateral nanowire wrap-gate devices with improved performance
- Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics
- Towards low-dimensional hole systems in Be-doped GaAs nanowires