activity
20122026
most citedEpitaxial Pb on InAs nanowires

86 citations · 333 across the 25 of their papers we have counts for

collaborators

25 papers

cond-mat.mes-hall2026

Tomography of Transport Pathways in Selective-Area-Grown Nanowires Using Angle-Resolved Conductance Fluctuations

Christian E. N. Petersen, Damon J. Carrad, Daria Beznasyuk +1

Understanding the spatial distribution of carriers is important for interpreting transport in nanoscale devices. Here, we apply conductance fluctuation tomography to planar selecti…

cond-mat.mtrl-sci2026

Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes

Giulia Meucci, Pinelopi O. Konstantinopoulou, Thies Jansen +15

The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective…

cond-mat.mtrl-sci2025

Phase controlled multi-terminal Josephson junction in ternary hybrid nanowire

Sabbir A. Kahn, Lukas Stampfer, Sara Marti-Sanchez +7

This work presents multiterminal Josephson junctions in hybrid semiconductor-superconductor InAsSb-Al nanocrosses. Hybrid nanocrosses are grown using molecular beam epitaxy and are…

cond-mat.mes-hall2025

Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires

Giulia Meucci, Dags Olšteins, Damon J. Carrad +6

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…

cond-mat.mes-hall2025

Gradient Electronic Landscapes in van der Waals Heterostructures

Nolan Lassaline, Camilla H. Sørensen, Giulia Meucci +7

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating…

cond-mat.mes-hall2025

: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices

Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6

Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…