40 citations · 40 across the 2 of their papers we have counts for
3 papers
Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices
Damon J. Carrad, Martin Bjergfelt, Thomas Kanne +6
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable…
Diluted Oxide Interfaces with Tunable Ground States
Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang +14
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of mu…
InAs nanowire transistors with multiple, independent wrap-gate segments
A. M. Burke, D. J. Carrad, J. G. Gluschke +5
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-ga…