86 citations · 333 across the 25 of their papers we have counts for
16 papers · 1 filter
Tomography of Transport Pathways in Selective-Area-Grown Nanowires Using Angle-Resolved Conductance Fluctuations
Christian E. N. Petersen, Damon J. Carrad, Daria Beznasyuk +1
Understanding the spatial distribution of carriers is important for interpreting transport in nanoscale devices. Here, we apply conductance fluctuation tomography to planar selecti…
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
Gradient Electronic Landscapes in van der Waals Heterostructures
Nolan Lassaline, Camilla H. Sørensen, Giulia Meucci +7
Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating…
: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices
Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6
Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…
Cryogenic Multiplexing with Bottom-Up Nanowires
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…
InAs/MoRe hybrid semiconductor/superconductor nanowire devices
Bilal Kousar, Damon J. Carrad, Lukas Stampfer +3
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of se…
Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions
Damon J. Carrad, Lukas Stampfer, Dags Olsteins +4
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the or…
Superconductivity and parity preservation in as-grown In islands on InAs nanowires
Martin Saurbrey Bjergfelt, Damon J. Carrad, Thomas Kanne +4
We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In…
Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires
Lukas Stampfer, Damon J. Carrad, Dags Olsteins +4
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments base…
Epitaxial Pb on InAs nanowires
Thomas Kanne, Mikelis Marnauza, Dags Olsteins +8
Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exot…
Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices
Damon J. Carrad, Martin Bjergfelt, Thomas Kanne +6
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable…
Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
A. R. Ullah, D. J. Carrad, P. Krogstrup +2
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate fai…
InAs nanowire transistors with multiple, independent wrap-gate segments
A. M. Burke, D. J. Carrad, J. G. Gluschke +5
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-ga…
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
D. J. Carrad, A. M. Burke, R. W. Lyttleton +7
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO polymer electrolyte. We use the patterned polymer electrolyte as a high…
Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot
D. J. Carrad, A. M. Burke, O. Klochan +6
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin tempera…
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
A. M. Burke, D. Waddington, D. Carrad +9
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum…