2 papers
physics.app-ph2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
physics.app-ph2018
Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
J. G. Gluschke, J. Seidl, R. W. Lyttleton +5
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of pary…