most citedAchieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

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cond-mat.mes-hall2012★ 2 cited

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

D. J. Carrad, A. M. Burke, P. J. Reece +6

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…